KTD3055

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KTD3055 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·Complement to Type KTB2955 APPLICATIONS ·High power amplifier applications ·Recommended for 30~35W audio frequency amplifier output stage application. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 10 A IB Base Current PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1A 40 W 150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KTD3055 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage...