KTD2058

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Collector Power Dissipation : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Complement to Type KTB1366 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 60 VCEO Collector-Emitter Voltage 60 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 3 IB Base Current-Continuous 0.5 UNIT V V V A A Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ 2 W 25 TJ Junction Temperature Tstg Storage Temperature Range 150 ℃ -55~150 ℃ KTD2058 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V ICBO Collector Cutoff Current VCB= 60V; IE=0 IEBO Emitter Cutoff Current VEB= 7V; IC=0 hFE DC Current Gain IC= 500mA ; VCE= 5V  hFE Classifications O Y GR 60-120 100-200 150-300 KTD2058 MIN TYP. MAX UNIT 60 V 1.0 V 1.0 V 100 μA 0.1 mA 60 300 NOTICE： ISC res...