KTD1510

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification KTD1510 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 150V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.5V(Max) @IC= 7A ·High DC Current Gain : hFE= 5000(Min) @ IC= 7A, VCE= 4V ·Complement to Type KTB2510 APPLICATIONS ·High power amplifier applications ·Recommended for 60W audio amplifier output stage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification KTD1510 ELECTRICAL CH...