isc Silicon PNP Power Transistor
DESCRIPTION ·High Collector-Emitter Breakdown Voltage
VCEO= -180V(Min) ·Complement to Type KTC4370A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base ...
