DatasheetsPDF.com
IRFZ34A
Power MOSFET
Description
$GYDQFHG 3RZHU 026)(7 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 60V ♦ Lower RDS(ON): 0.030Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TS...
Fairchild Semiconductor
Download IRFZ34A Datasheet
Similar Datasheet
IRFZ30
(IRFZ30 / IRFZ32) N-Channel Power MOSFET
- International Rectifier
IRFZ30
(IRFZ30 / IRFZ34) N-Channel Power MOSFET
- Samsung Electronics
IRFZ30
(IRFZ30 / IRFZ32) Power Field Effect Transistors
- Motorola
IRFZ32
(IRFZ30 / IRFZ32) N-Channel Power MOSFET
- International Rectifier
IRFZ32
(IRFZ30 / IRFZ32) Power Field Effect Transistors
- Motorola
IRFZ34
Power MOSFET
- Fairchild Semiconductor
IRFZ34
(IRFZ30 / IRFZ34) N-Channel Power MOSFET
- Samsung Electronics
IRFZ34
Power MOSFET
- International Rectifier
IRFZ34
Power MOSFET
- Vishay
IRFZ34A
Power MOSFET
- Fairchild Semiconductor
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
