isc Silicon NPN Power Transistors
DESCRIPTION ·High Voltage Capability
Fast and Very Tight Switching Times Parameters ts...
isc Silicon
NPN Power
Transistors
DESCRIPTION ·High Voltage Capability
Fast and Very Tight Switching Times Parameters tsi and tfi High Reliability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
INCHANGE Semiconductor
MJW18020
APPLICATIONS Designed for motor control applications, high power
supplies and UPS’s for which the high reproducibility of DC and Switching parameters minimizes the dead time in bridge configurations
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
1000
V
VCEO Collector-Emitter Voltage
480
V
VEBO
Emitter-Base Voltage
9.0
V
IC
Collector Current-Continuous
30
A
ICM
Collector Current-Peak
45
A
IB
Base Current-Continuous
6.0
A
PC
Collector Power Dissipation@TC=25℃ 250
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 0.5
UNIT ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistors
INCHANGE Semiconductor
MJW18020
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.0A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 20A; IB= 4.0A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 10A; IB= 2.0A
VBE(sat)-2 Base-Emitter ...