MJL1302A

isc Silicon PNP Power Transistor MJL1302A DESCRIPTION ·Low Harmonic Distortion ·High Safe Operation Area — 1 A/100 V @ 1 sec ·High fT — 30 MHz (TYP) ·Complement to Type MJL3281A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage VCEX Collector-Emitter Voltage-1.5V IC Collector Current-Continuous ICM Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range isc Website：www.iscsemi.com VALUE UNIT 200 V 200 V 7 V 200 V 15 A 25 A 200 W 150 ℃ -65~150 ℃ 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter-Base Voltage IE = 100 uA, IC = 0 VCE(sat) Collector-Emitter Saturation Voltage ICBO Collector Cutoff Current IC= 10A; IB=1A VCB= 200V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC = 100 mA, VCE = 5 V hFE-2 DC Current Gain IC = 1 A, VCE = 5 V hFE-3 DC Current Gain IC = 3 A, VCE = 5 V hFE-4 DC Current Gain IC = 5 A, VCE = 5 V hFE-5 DC Current Gain IC = 7 A, VCE = 5 V hFE-6...