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MJE9780 Dataheets PDF



Part Number MJE9780
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon PNP Power Transistor
Datasheet MJE9780 DatasheetMJE9780 Datasheet (PDF)

isc Silicon PNP Power Transistor MJE9780 DESCRIPTION ·Standard TO–220 Package ·Gain Range of 50 – 200 at 500 mAdc/10 volts ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed forvertical output of 14–inch to 17–inch televisions and CRT monitors, as well as other applications requiring a 150 volt PNP transistor. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter V.

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isc Silicon PNP Power Transistor MJE9780 DESCRIPTION ·Standard TO–220 Package ·Gain Range of 50 – 200 at 500 mAdc/10 volts ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed forvertical output of 14–inch to 17–inch televisions and CRT monitors, as well as other applications requiring a 150 volt PNP transistor. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.12 UNIT ℃/W isc Website:www.iscsemi.com 2 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJE9780 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA ; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -0.8 V VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -4V -1.5 V ICBO Collector Cutoff Current VCB= -150V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA hFE 1 DC Current Gain IC= -0.5A ; VCE= -10V 50 200 hFE 2 DC Current Gain IC= -0.05A ; VCE= -10V 60 fT Current-Gain—Bandwidth Product IC= -0.5A;VCE= -10V;ftest= 1MHz 5 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc Website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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