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MJE350

Silicon PNP Power Transistor

Description

isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·DC Current Gain- : hFE = -100(Min) @ IC= -50mA ·Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= -50mA ·Complement to the NPN MJE340 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·D...

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