isc Silicon NPN Power Transistor
MJE13003A
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.) ...
isc Silicon
NPN Power
Transistor
MJE13003A
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage
: VCE(sat) = 1.0(Max) @ IC= 1.0A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching
regulators, inverters, DC-DC converter, Motor control, Solenoid/Relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
700
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
1.5
A
IB
Base Current
Collector Power Dissipation
PC
Ta=25℃ Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
0.75
A
1.4 W
20
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
3.12 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 89 ℃/W
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1 A ;IB= 0.25A
VBE(sat) Base-Emitter Saturation V...