MJD350

isc Silicon PNP Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = -300 V(Min) ·Low Collector Saturation Voltage- : VCE(sat) = -1.0V(Max.)@ IC= -50mA ·DPAK for Surface Mount Applications ·Complement to Type MJD340 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -300 V VCEO Collector-Emitter Voltage -300 V VEBO Emitter-Base Voltage -3 V IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Ti Junction Temperature -0.5 A -0.75 A 15 W 1.56 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBO L PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 8.33 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W MJD350 isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -1.0mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1.0mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1.0mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -50m...