isc Silicon NPN Power Transistor
DESCRIPTION · Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 800V(Min) ·High Switc...
isc Silicon
NPN Power
Transistor
DESCRIPTION · Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 800V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MJ8505
APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching
regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector- Base Voltage
1400
V
VCEO(SUS) Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
8
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
8
A
IBM
Base Current-Peak
12
A
PC
Collector Power Dissipation@TC=25℃ 175
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 1.0
UNIT ℃/W
isc website:www.iscsemi.com
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isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 2A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 4A
VBE(sat) Base-Emitt...