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MJ3738

Inchange Semiconductor

Silicon PNP Power Transistor


Description
INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification MJ3738 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -225V(Min) ·High Switching Speed APPLICATIONS ·Designed for high voltage switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage ...



Inchange Semiconductor

MJ3738

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