DatasheetsPDF.com
MJ3055
Silicon NPN Power Transistor
Description
isc Silicon
NPN
Power
Transistor
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAX...
Inchange Semiconductor
Download MJ3055 Datasheet
Similar Datasheet
MJ3000
10 AMPERE DARLINGTON POWER TRANSISTORS
- Motorola
MJ3000
Bipolar NPN Device
- Semelab PLC
MJ3000
(MJ3000 / MJ3001) Complementary Silicon Power Darlington Transistors
- ST Microelectronics
MJ3000
Silicon NPN Power Transistors
- SavantIC
MJ3000
(MJ3000 / MJ3001) COMPLEMENTARY POWER DARLINGTONS
- Comset Semiconductors
MJ3000
NPN Transistor
- INCHANGE
MJ3000
NPN Transistor
- DIGITRON
MJ3000
Silicon complementary trasistors
- Central Semiconductor
MJ3001
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
- Motorola
MJ3001
Silicon NPN Power Transistors
- SavantIC
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)