isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1918
DESCRIPTION ·Suitable for middle power drivers ·High v...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD1918
DESCRIPTION ·Suitable for middle power drivers ·High voltage:VCEO=160V ·Complementary
PNP types:2SB1275 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Motor drivers,LED driver,Power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
160 V
VCEO
Collector-Emitter Voltage
160 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous 1.5 A
ICM Collector Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
3.0 A 10 W 150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD1918
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVCBO Collector-Base breakdown voltage
IC=50uA
BV...
