2SD1640

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1640 DESCRIPTION ·High DC Current Gain- : hFE = 4000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low -frequency output amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 2 A ICM Collector Current-Peak Collector Power Dissipation TC=25℃ PC Collector Power Dissipation Ta=25℃ Tj Junction Temperature 3 A 15 W 1.2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD1640 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA, IB= 0 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 100μA, IE= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ,IB= 1mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A ,IB= 1mA ICBO Collector Cutoff Current VCB= 120V, IE= 0 1.5 V 2.0 V 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3 mA hFE ...