INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD1640
DESCRIPTION ·High DC Current Gain-
: hFE =...
INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
2SD1640
DESCRIPTION ·High DC Current Gain-
: hFE = 4000(Min)@ IC= 1A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low -frequency output amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
120
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
Collector Power Dissipation TC=25℃ PC Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
3
A
15 W
1.2
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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INCHANGE Semiconductor
isc Silicon
NPN Darlington Power
Transistor
2SD1640
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA, IB= 0
100
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= 100μA, IE= 0
120
V
VCE(sat)
Collector-Emitter Saturation Voltage IC= 1A ,IB= 1mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A ,IB= 1mA
ICBO
Collector Cutoff Current
VCB= 120V, IE= 0
1.5
V
2.0
V
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
3
mA
hFE
...