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2SC2314

Part Number	2SC2314
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 9, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Voltage- :VCER= 75V(Min) ;RBE=150Ω ·Collector Current- ...
Datasheet	2SC2314 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Voltage- :VCER= 75V(Min) ;RBE=150Ω ·Collector Current- :IC=1.
5A ·Low Saturation Voltage : VCE(sat)=0.
6V(MAX)@ IC=0.
5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 75 V VCER Collector-Emitter Voltage RBE=150Ω 75 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 1.
5 A 0.
8 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2314 isc website：www.
iscsemi.
c...

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