SMD Type
Silicon PNP Transistor 2SB768
Transistors
Features
High Voltage:VCBO=-150V
+1.50 0.15 -0.15
TO-252
6.50+0...
SMD Type
Silicon
PNP Transistor 2SB768
Transistors
Features
High Voltage:VCBO=-150V
+1.50 0.15 -0.15
TO-252
6.50+0.15 -0.15
5.30+0.2 -0.2
2.30+0.1 -0.1
0.50+0.8 -0.7
Unit: mm
3.80
+5.55 0.15 -0.15
+9.70 0.2 -0.2
+ 0.252 .6 5 -0.1
+ 0.150 .5 0 -0.15
+ 0.281 .5 0 -0.1
0.80+0.1 -0.1
0.127 max
2.3 4.60+0.15
-0.15
0.60+0.1 -0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Collector-to-Base Voltage
VCBO
Collector-to-Emitter Voltage
VCEO
Emitter-to-Base Voltage
VEBO
Collector Current
IC
Collector Current (Pulse) *1
ICP
Total Power Dissipation *2 Ta=25
PT
Junction Temperature
Tj
Storage Temperature
Tstg
*1 PW 10ms,.Duty Cycle 50%
*2 when mounted on ceramic substrate of 7.5cm2 X 0.7mm
Rating -200 -150
-5 -2 -3 2 150 -55 to 150
Unit V V V A A W
1 Base 2 Collector 3 Emitter
Electrical Characteristics Ta = 25
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain * Collector-to-Emitter Saturation Voltage * Gain Badnwidth Product * P...
