2SB1669-Z

isc Silicon PNP Power Transistor DESCRIPTION ·High DC current amplifier rate hFE≥100@VCE=-5V,IC=-0.5A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·The 2SB1669-Z is a power transistor that can be directly driven from the output of an IC.This transistor is ideal for OA and FA equipment such as motor and solenoid drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -3 A ICP Collector Current-Pulse -6 A PC Total Power Dissipation @ Ta=25℃ 1.5 W PC Total Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1669-Z isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1669-Z ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCE(sat)NOTE Collector-Emitter Saturation Voltage VBE(sat)NOTE Base-Emitter Saturation Voltage ICBO Collector Cutoff Current hFE1NOTE DC Current Gain hFE2NOTE DC Current Gain fT Transition frequency Cob Collector output capacitance NOTE:Pulse test PW≤350us,duty cycle ≤2% Switching Times ton Turn-on Time CONDITIONS IC= -3.0A; IB= -300mA IC= -3.0A; IB= -300mA VCB= -60V; IE= 0 IC= -0.5A; VCE= -5V IC= -3A; VCE= -5V VCE=-5V ,IC=-500mA VCB=-10V ,IE=0,f=1MH...