TECHNICAL DATA
UNITIZED DUAL NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/270
Devices
2N2060 2N2060L
Qualified L...
TECHNICAL DATA
UNITIZED DUAL
NPN SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/270
Devices
2N2060 2N2060L
Qualified Level
JAN JANTX JANTXV
MAXIMUM RATINGS
Ratings
Symbol
2N2060
Unit
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
VCEO VCBO VEBO
IC
60 100 7.0 500 One Both
Vdc Vdc Vdc mAdc
Total Power Dissipation
@ TA = +250C (1) @ TC = +250C (2)
Section Sections
PT
540 600 1.5 2.12
Operating & Storage Junction Temperature Range
TJ, Tstg
-65 to +200
1) Derate linearly 3.08 mW/0C for TA > 250C for one section, 3.48 mW/0C for both sections
2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.1 mW/0C for both sections
mW W 0C
ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) RBE ≤ 10 Ω, IC = 10 mAdc Collector-Emitter Breakdown Voltage
IC = 30 mAdc Collector-Base Cutoff Current
V(BR)CER V(BR)CEO
VCB = 100 Vdc
ICBO
...