JAN2N2060

TECHNICAL DATA UNITIZED DUAL NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/270 Devices 2N2060 2N2060L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N2060 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current VCEO VCBO VEBO IC 60 100 7.0 500 One Both Vdc Vdc Vdc mAdc Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Section Sections PT 540 600 1.5 2.12 Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 1) Derate linearly 3.08 mW/0C for TA > 250C for one section, 3.48 mW/0C for both sections 2) Derate linearly 8.6 mW/0C for TC > 250C for one section, 12.1 mW/0C for both sections mW W 0C ELECTRICAL CHARACTERISTICS (TA = +250C unless otherwise noted) Characteristics Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(3) RBE ≤ 10 Ω, IC = 10 mAdc Collector-Emitter Breakdown Voltage IC = 30 mAdc Collector-Base Cutoff Current V(BR)CER V(BR)CEO VCB = 100 Vdc ICBO ...