MJD122

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD122 DESCRIPTION ·High DC current gain ·Built-in a damper diode at E-C ·Monolithic Construction With Built-in Base-Emitter Shunt Resistors ·Complementary Pairs Simplifies Designs ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICm IB PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Collector Power Dissipation Ta=25℃ Collector Power Dissipation TC=25℃ Junction Temperature Storage Temperature Range 100 V 100 V 5 V 5 A 8 A 120 mA 20 W 0.16 150 ℃ -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 6.25 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJD122 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(sus) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0 ICEO Collector Cutoff Current VcE= 50V; IC= 0 ICBO Collector Cutoff Current VCB=100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1* DC Current Gain IC= 4A; VCE=4V hFE-2* DC Current Gain IC= 8A; V...