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MJ10012T

Part Number	MJ10012T
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Features	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·Hi...
Published	Nov 8, 2016
Datasheet	MJ10012T PDF File

Features

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) ·High Power Dissipation ·DARLINGTON ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable ...

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