MBR6080PT

Schottky Barrier Rectifier INCHANGE Semiconductor MBR6080PT FEATURES ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier, majonty carrier conduction ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Surge Capability,High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage ,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltag VALUE UNIT 80 V 56 V IF(AV) IFSM TJ Tstg Average Rectified Forward Current 40 Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 400 Junction Temperature -65~150 A A ℃ Storage Temperature Range -65~175 ℃ isc website：www.iscsemi.com...