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MBR6060PT Dataheets PDF



Part Number MBR6060PT
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Schottky Barrier Rectifier
Datasheet MBR6060PT DatasheetMBR6060PT Datasheet (PDF)

Schottky Barrier Rectifier INCHANGE Semiconductor MBR6060PT FEATURES ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier, majonty carrier conduction ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Surge Capability,High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage ,high frequency inverters,free wheeling and polarity protecti.

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR6060PT FEATURES ·Plastic material used carriers Unerwriter Laboratory ·Metal silicon rectifier, majonty carrier conduction ·Low Power Loss,High Efficiency ·Guard ring for transient protection ·High Surge Capability,High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For use in low voltage ,high frequency inverters,free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltag VALUE UNIT 60 V 42 V IF(AV) IFSM IRRM TJ Tstg dv/dt Average Rectified Forward Current Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions Peak Repetitive Reverse Surge Current (20μs, 1.0kHz) 60 420 1.0 Junction Temperature -65~150 A A A ℃ .


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