INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR3060WT
FEATURES ·Dual diode construction;te...
INCHANGE Semiconductor
Schottky Barrier Rectifier
Product Specification
MBR3060WT
FEATURES ·Dual diode construction;terminals 1 and 3 may be connected
for parallel operation at full rating ·Low forward voltage ·Guarding for stress protection ·150℃ operating junction temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS ·Case: TO-3P package ·Mounting position: Any
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRMS VDC IF(AV) IFSM
TJ
Peak Repetitive Reverse Voltage
60
Maximum RMS Voltage
42
Maximum DC Blocking Voltage
60
Average Rectified Forward Current (Per Leg) (Total)
15 30
Peak Forward Surge Current, 8.3 ms single halfsine-wave superimposed on rated load (JEDEC method)
300
Junction Temperature
-65~150
V V V A A ℃
Tstg Storage Temperature Range
-65~150 ℃
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
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