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MBR16100CT

Inchange Semiconductor

Schottky Barrier Rectifier

Schottky Barrier Rectifier FEATURES ·Low Forward Voltage ·Low power loss high efficiency ·High Surge Capability ·High Op...


Inchange Semiconductor

MBR16100CT

File Download Download MBR16100CT Datasheet


Description
Schottky Barrier Rectifier FEATURES ·Low Forward Voltage ·Low power loss high efficiency ·High Surge Capability ·High Operating Junction Temperature ·Low Stored Charge Majority Carrier Conduction ·Pb-Free Packages are Available ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power Supply-output Rectification ·Power Management ·Instrumentation INCHANGE Semiconductor MBR16100CT ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) IFRM IFSM IRRM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) Peak Repetitive Forward Current (Rated VR,Square Wave,20kHz) TC= 165℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) Peak Repetitive Reverse Surge Current (2.0μs, 1.0kHz) 100 8 16 150 0.5 V A A A A TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range ...




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