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MBR10150 Dataheets PDF



Part Number MBR10150
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Schottky Barrier Rectifier
Datasheet MBR10150 DatasheetMBR10150 Datasheet (PDF)

Schottky Barrier Rectifier INCHANGE Semiconductor MBR10150 FEATURES ·Metal silicon junction,majority carrier conduction ·Low Power Loss/High Efficiency ·High current capability,low forward voltage drop ·High surge capability ·Guardring for overvoltage protection ·High temperature soldering guaranteed ·RoHS product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage,high frequency inverters,free wheeling and polarrity prote.

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Schottky Barrier Rectifier INCHANGE Semiconductor MBR10150 FEATURES ·Metal silicon junction,majority carrier conduction ·Low Power Loss/High Efficiency ·High current capability,low forward voltage drop ·High surge capability ·Guardring for overvoltage protection ·High temperature soldering guaranteed ·RoHS product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage,high frequency inverters,free wheeling and polarrity protection applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) IFRM IFSM IRRM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 125℃ Peak Repetitive Forward Current (Rated VR,Square Wave,20kHz) TC= 125℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) Peak Repetitive Reverse Surge Current (20μs, 1..


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