Document
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR10150
FEATURES ·Metal silicon junction,majority carrier conduction ·Low Power Loss/High Efficiency ·High current capability,low forward voltage drop ·High surge capability ·Guardring for overvoltage protection ·High temperature soldering guaranteed ·RoHS product ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-voltage,high frequency inverters,free wheeling
and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR IF(AV)
IFRM
IFSM
IRRM
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC= 125℃
Peak Repetitive Forward Current
(Rated VR,Square Wave,20kHz) TC= 125℃
Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz)
Peak Repetitive Reverse Surge Current (20μs, 1..