AT49F4096

AT49F4096 Features Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 90 ns Internal Erase/Program Control Sector Architecture - One 8K Words (16K bytes) Boot Block with Programming Lockout - Two 8K Words (16K bytes) Parameter Blocks - One 232K Words (464K bytes) Main Memory Array Block Fast Sector Erase Time - 10 seconds Word-By-Word Programming - 50 µs/Word Hardware Data Protection DATA Polling For End Of Program Detection Low Power Dissipation - 50 mA Active Current - 300 µA CMOS Standby Current Typical 10,000 Write Cycles Description The AT49F4096 is a 5-volt-only, 4 megabit Flash Memory organized as 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 90 ns with power dissipation of just 275 mW. When deselected, the CMOS standby current is less than 300 µA. (continued) 4 Megabit (256K x 16) 5-volt Only CMOS Flash Memory Preliminary ...