AT49HF010

Features Single Voltage Operation - 5V Read - 5V Reprogramming Fast Read Access Time - 45 ns Internal Program Control and Timer 8K bytes Boot Block With Lockout Fast Erase Cycle Time - 10 seconds Byte By Byte Programming - 10 µs/Byte Hardware Data Protection DATA Polling For End Of Program Detection Low Power Dissipation - 30 mA Active Current - 100 µA CMOS Standby Current Typical 10,000 Write Cycles Description The AT49F010/HF010 are 5-volt-only in-system programmable and erasable Flash Memories. Their 1-megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 45 ns (HF version) with a power dissipation of just 165 mW over the commercial temperature range. When the device is deselected, the CMOS standby current is less than 100 µA. To allow for simple in-system reprogrammability, the AT49F010/HF010 does not require high input voltages for progr...