CY7C1519V18

CY7C1517V18 CY7C1528V18 CY7C1519V18 CY7C1521V18 72-Mbit DDR-II SRAM 4-Word Burst Architecture Features Functional Description 72-Mbit density (8M x 8, 8M x 9, 4M x 18, 2M x 36) 300-MHz clock for high bandwidth 4-Word burst for reducing address bus frequency Double Data Rate (DDR) interfaces (data transferred at 600 MHz) @ 300 MHz Two input clocks (K and K) for precise DDR timing — SRAM uses rising edges only Two input clocks for output data (C and C) to minimize clock-skew and flight-time mismatches Echo clocks (CQ and CQ) simplify data capture in high-speed systems Synchronous internally self-timed writes 1.8V core power supply with HSTL inputs and outputs Variable drive HSTL output buffers Expanded HSTL output voltage (1.4V–VDD) Available in 165-ball FBGA package (15 x 17 x 1.4 mm) Offered in lead-free and non lead-free packages JTAG 1149.1 compatible test access port Delay Lock Loop (DLL) for accurate data placement...