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TIP142F Dataheets PDF



Part Number TIP142F
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description Silicon NPN Power Transistor
Datasheet TIP142F DatasheetTIP142F Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Complement to Type TIP147F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emit.

  TIP142F   TIP142F


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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 1000(Min)@ IC= 5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Complement to Type TIP147F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A ICM Collector Current-Peak 15 A IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.5 A 60 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ TIP142F isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A ,IB= 10mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A ,IB= 40mA VBE(sat) Base-Emitter Saturation Voltage IC= 10A ,IB= 40mA VBE(on) Base-Emitter On Voltage IC= 10A ; VCE= 4V ICBO Collector Cutoff current VCB= 100V, IE= 0 ICEO Collector Cutoff current VCE= 50V, IB= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 5A ; VCE= 4V hFE-2 DC Current Gain IC= 10A ; VCE= 4V TIP142F MIN TYP. MAX UNIT 100 V 2.0 V 3.0 V 3.5 V 3.0 V 1 mA 2 mA 2 mA 1000 500 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. isc website:www.iscsemi.com 2 isc & iscsemi is registered trademark .


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