isc Silicon PNP Power Transistors
INCHANGE Semiconductor
MJD32C
DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1A ·...
isc Silicon
PNP Power
Transistors
INCHANGE Semiconductor
MJD32C
DESCRIPTION ·DC Current Gain -hFE = 25(Min)@ IC= -1A ·Collector-Emitter Breakdown Voltage-
: V(BR) CEO= -100V(Min) ·Complement to Type MJD31C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for use in general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO VCEO VEBO
IC ICM IB
PC
Tj
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Pulse Base Current Collector Power Dissipation TC=25℃ Collector Power Dissipation Ta=25℃ Junction Temperature
-100
V
-100
V
-5
V
-3
A
-5
A
-1
A
15 W
1.56
150
℃
Tstg
Storage Ttemperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
8.3 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 80 ℃/W
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isc Silicon
PNP Power
Transistors
INCHANGE Semiconductor
MJD32C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.375A
VBE(on) Base-Emitter On Voltage
IC= -3A; VCE= -4V
ICES
Collector Cutoff Current
VCE= -100V; VEB= 0
ICEO
Coll...