DatasheetsPDF.com

MJD3055

Part Number	MJD3055
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 6, 2016
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor MJD3055 DESCRIPTION ·Excellent Safe Operating Area ·Collector-...
Datasheet	MJD3055 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor MJD3055 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.
1 V(Max)@ IC = 4A ·Complement to Type MJD2955 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current 6 A Collector Power Dissipation@TC=25℃...

Similar Datasheet

MJD3055 Silicon NPN Power Transistor - Inchange Semiconductor
MJD3055 General Purpose Amplifier - Fairchild
MJD3055 Complementary Silicon Power Transistors - ST Microelectronics
MJD3055 Complementary Power Transistors - ON
MJD3055 SILICON POWER TRANSISTORS - Motorola
MJD3055 Epitaxial Planar NPN Transistor - GME
MJD3055 SMD Power Transistor - TAITRON
MJD3055T4 Low voltage NPN power transistor - STMicroelectronics

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)