isc Silicon NPN Power Transistor
DESCRIPTION ·DC Current Gain-
: hFE = 40(Min) @ IC= 0.2 A ·Low Collector Saturation Voltage-
: VCE(sat) = 0.3V(Max.)@ IC= 0.5 A ·Complement to the PNP MJD253 ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Designed for low power audio amplifier and low-current,
high-speed sw...
