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MJD148

Inchange Semiconductor

Silicon NPN Power Transistor


Description
isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE = 85(Min) @ IC= 0.5A ·Low Collector Saturation Voltage- : VCE(sat) = 0.5V(Max.)@ IC= 2A ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed switchin...



Inchange Semiconductor

MJD148

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