Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR41H100CT
FEATURES ·Low Forward Voltage ·Low Power Loss,High Effic...
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR41H100CT
FEATURES ·Low Forward Voltage ·Low Power Loss,High Efficiency ·High Surge Capability ·175℃ Operating Junction Temperature ·Pb-Free Package is Available ·Guard -Ring for Stress Protection ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max.
for 10 Seconds
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current
(Rated VR)TC= 150℃
100 V 20 A
IFRM
Peak Repetitive Forward Current
(Rated VR,Square Wave,20kHz)TC= 145℃
40 A
Peak Forward Surge Current, 8.3 ms single IFSM halfsine-wave superimposed on rated load 350
(JEDEC method)
A
TJ Juncti...
