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MBR2045

Inchange Semiconductor

Schottky Barrier Rectifier

Schottky Barrier Rectifier FEATURES ·Metal of silicon rectifier, majonty carrier conduction ·Guard ring for transient p...


Inchange Semiconductor

MBR2045

File Download Download MBR2045 Datasheet


Description
Schottky Barrier Rectifier FEATURES ·Metal of silicon rectifier, majonty carrier conduction ·Guard ring for transient protection ·Low power loss high efficiency ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MAXIMUN RATINGS ·Operating Temperature: -55C to +150C ·Storage Temperature: -55C to +150C ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 45 V VR(RMS) RMS Reverse Voltag 31.5 V IF(AV) Average Rectified Forward Current (Rated VR) TC= 135℃ 20 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 150 A wave, single phase, 60Hz) TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ MBR2045 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier MBR2045 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF Maximum Instantaneous Forward Voltage IF= 20A ; TC= 25℃ IR Maximum Instantaneous Reverse Current Rated DC Voltage, TC= 25℃ Rated DC Voltage, TC= 125℃ 0.63 V 0.1 5.0 mA Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notificati...




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