Schottky Barrier Rectifier
FEATURES ·Metal of silicon rectifier, majonty carrier conduction ·Guard ring for transient p...
Schottky Barrier Rectifier
FEATURES ·Metal of silicon rectifier, majonty carrier conduction ·Guard ring for transient protection ·Low power loss high efficiency ·High Surge Capability,High Current Capability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MAXIMUN RATINGS ·Operating Temperature: -55C to +150C ·Storage Temperature: -55C to +150C
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
45
V
VR(RMS) RMS Reverse Voltag
31.5
V
IF(AV)
Average Rectified Forward Current
(Rated VR) TC= 135℃
20
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half-
150
A
wave, single phase, 60Hz)
TJ
Junction Temperature
-55~150 ℃
Tstg
Storage Temperature Range
-55~150 ℃
MBR2045
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Schottky Barrier Rectifier
MBR2045
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX 2.0
UNIT ℃/W
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%)
SYMBOL
PARAMETER
CONDITIONS
MAX
UNIT
VF
Maximum Instantaneous Forward Voltage IF= 20A ; TC= 25℃
IR
Maximum Instantaneous Reverse Current
Rated DC Voltage, TC= 25℃ Rated DC Voltage, TC= 125℃
0.63
V
0.1 5.0
mA
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