MBR2030

Schottky Barrier Rectifier INCHANGE Semiconductor MBR20300 FEATURES ·Metal silicon junction，majority carrier conduction ·Low Power Loss/High Efficiency ·High current capability，low forward voltage drop ·High surge capability ·Guardring for overvoltage protection ·High temperature soldering guaranteed ·RoHS product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage,high frequency inverters，free wheeling and polarrity protection applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 125℃ 300 V 20 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 180 A wave, single phase, 60Hz) IRRM Peak Repetitive Reverse Surge Current (20μs, 1.0kHz) 0.5 A TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBR20300 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS MAX UNIT VF Maximum Instantaneous Forward Voltage IF= 20A ; TC= 25℃ I...