MBR1060

Schottky Barrier Rectifier INCHANGE Semiconductor MBR1060 FEATURES ·Schottky Barrier Chip ·Guard Ring Die Construction for Transient Protection ·Low Power Loss/High Efficiency ·High Surge Capability ·High Current Capability，Low Forward Voltage Drop ·Plastic Material：UL Flammability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage,high frequency inverters，free wheeling and polarrity protection applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VR(RMS) RMS Reverse Voltag IF(AV) IFSM Average Rectified Forward Current (Rated VR) TC= 125℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) 60 42 10 150 V V A A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ dv/dt Voltage Rate of Chang...