ISH6N70

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification ISH6N70 ·FEATURES ·Static Drain-Source On-Resistance : RDS(on) = 1.8Ω(Max) ·Low gate charge ·High switching speed ·Low input capacitance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·The ISH6N70 is universally applied in high efficiency switch mode power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 700 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 6A IDM Drain Current-Single Plused 24 A PD Total Dissipation @TC=25℃ 55 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 2.27 ℃/W Rth j-a Thermal Resistance, Junction to Ambient 110 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is...