INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
FQPF8N60
·FEATURES ·Drain Current –ID...
INCHANGE Semiconductor
isc N-Channel Mosfet
Transistor
isc Product Specification
FQPF8N60
·FEATURES ·Drain Current –ID= 7.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements
·DESCRITION ·Designed for high efficiency switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600 V
VGS Gate-Source Voltage-Continuous
±30
V
ID Drain Current-Continuous
7.5 A
IDM Drain Current-Single Plused
30 A
PD Total Dissipation @TC=25℃
48 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case
2.6 ℃/W
Rth j-a Thermal Resistance, Junction to Ambient 62.5 ℃/W
isc website： www.iscsemi.com
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