BYW51-200

Ultrafast Rectifier INCHANGE Semiconductor BYW51-200 FEATURES ·High surge capacity ·Low Forward Voltage ·Low Leakage Current ·150℃ Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Dual center tap rectifier suited for switched mode power supplies and high frequency DC to DC converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Per Diode Per device 200 10 20 V A IF(RMS) RMS forward current Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions halfwave, single phase, 60Hz) TJ Junction Temperature 20 A 100 A 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark Fast Recovery Rectifier THERMAL CHARACTERISTICS SYMBOL ...