Document
Supertex inc.
DN2450
N-Channel Depletion-Mode Vertical DMOS FETs
Features
►► High input impedance ►► Low input capacitance ►► Fast switching speeds ►► Low on-resistance ►► Free from secondary breakdown ►► Low input and output leakage
Applications
►► Normally-on switches ►► Battery operated systems ►► Voltage to current converters ►► Constant current sources ►► Current and voltage limiters
General Description
These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a.