1M x 4 DRAM
DRAM
SMJ44400
1M x 4 DRAM
DYNAMIC RANDOM-ACCESS
MEMORY
AVAILABLE AS MILITARY
SPECIFICATIONS
• SMD 5962-90847 • MIL-STD-...
Description
DRAM
SMJ44400
1M x 4 DRAM
DYNAMIC RANDOM-ACCESS
MEMORY
AVAILABLE AS MILITARY
SPECIFICATIONS
SMD 5962-90847 MIL-STD-883
FEATURES
Organized 1,048,576 x 4 Single +5V ±10% power supply Enhanced Page-Mode operation for faster memory access
3 Higher data bandwidth than conventional page-mode parts
3 Random Single-Bit Access within a row with a column address CAS\-Before-RAS\ (CBR) Refresh Long Refresh period: 1024-cycle Refresh in 16ms (Max) 3-State unlatched Output Low Power Dissipation All Inputs/Outputs and Clocks are TTL Compatible Processing to MIL-STD-883, Class B available
PIN ASSIGNMENT (Top View)
20-Pin DIP (JD) 20-Pin Flatpack (HR)
(400 MIL)
DQ1 DQ2
W\ RAS\
A9 A0 A1 A2 A3 Vcc
1 2 3 4 5 6 7 8 9 10
20 Vss 19 DQ4 18 DQ3 17 CAS\ 16 OE\ 15 A8 14 A7 13 A6 12 A5 11 A4
Pin Name
Function
A0 - A9 Address Inputs
CAS\ Column-Address Strobe
DQ1 - DQ4 Data Inputs/Outputs
OE\ Output Enable
RAS\ Row-Address Strobe
W\ Write Enable
Vcc 5V S...
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