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C3M0120090J

Part Number	C3M0120090J
Manufacturer	Cree
Description	Silicon Carbide Power MOSFET
Published	Nov 3, 2016
Detailed Description	C3M0120090J VDS ID @ 25˚C 900 V 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channe...
Datasheet	C3M0120090J PDF File

Overview

C3M0120090J VDS ID @ 25˚C 900 V 22 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode Features • New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • New low impedance package with driver source • Fast intrinsic diode with low reverse recovery (Qrr) • Halogen free, RoHS compliant • Wide creepage (~7mm) between drain and source Benefits • Higher system efficiency • Reduced cooling requirements • Increased power density • Increased system switching frequency Applications • Renewable energy • EV battery chargers • High voltage DC/DC converters • Switch Mode Pow...

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