C3M0120090D

VDS 900 V C3M0120090D ID @ 25˚C 23 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 120 mΩ N-Channel Enhancement Mode Features Package C3M SiC MOSFET technology High blocking voltage with low On-resistance High speed switching with low capacitances Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits Higher system efficiency Reduced cooling requirements Increased power density Increased system switching frequency Applications Renewable energy EV battery chargers High voltage DC/DC converters Switch Mode Power Supplies Lighting Part Number C3M0120090D Package TO-247-3 Marking C3M0120090 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Parameter Value VDSmax VGSmax VGSop Drain - Source Voltage Gate - Source Voltage (dynamic) Gate - Source Voltage (static) ID Continuous Drain Current 900 -8/+19 -4/+15 23 15 ID(pulse) Pulsed Drain Current 50 PD Power Dissipation TJ , Tstg Operating Junction and Storage Temperature TL Solder Temperature Md Mounting Torque Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V 97 -55 to +150 260 1 8.8 Unit Test Conditions V VGS = 0 V, ID = 100 μA V AC (f >1 Hz) V Static VGS = 15 V, TC = 25˚C A VGS = 15 V, TC = 100˚C A Pulse width tP limited by Tjmax W TC=25˚C, TJ = 150 ˚C ˚C ˚C 1.6mm (0.063”) from case for 10s Nm lbf-in M3 or 6-32 screw Note Note: ...