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AS4C16M16SA

Alliance Semiconductor

256M - (16M x 16bit) Synchronous DRAM

Confidential AS4C16M16SA 256M – (16Mx16bit) Synchronous DRAM (SDRAM) (Rev. 2.0 63nm, Mar /2014) Features  Fast access...


Alliance Semiconductor

AS4C16M16SA

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Description
Confidential AS4C16M16SA 256M – (16Mx16bit) Synchronous DRAM (SDRAM) (Rev. 2.0 63nm, Mar /2014) Features  Fast access time from clock: 5/5.4 ns  Fast clock rate: 166/143 MHz  Fully synchronous operation  Internal pipelined architecture  4M word x 16-bit x 4-bank  Programmable Mode registers - CAS Latency: 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved - Burst stop function  Operating temperature range - Commercial (0 ~ 70°C) - Industrial (-40 ~ 85°C)  Auto Refresh and Self Refresh  8192 refresh cycles/64ms  CKE power down mode  Single +3.3V ±0.3V power supply  Interface: LVTTL  54-pin 400 mil plastic TSOP II package  54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package - All parts ROHS are compliant Overview The 256Mb SDRAM is a high-speed CMOS synchronous DRAM containing 256 Mbits. It is internally configured as 4 Banks of 4M word x 16 DRAM with a synchronous interface (all signals are registered on the...




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