DatasheetsPDF.com

AS4C128M16D3LB-12BCN

Alliance Semiconductor

Double-data-rate architecture

AS4C128M16D3LB-12BCN Revision History 2Gb AS4C128M16D3LB-12BCN - 96 ball FBGA PACKAGE Revision Details Rev 1.0 Prelimin...


Alliance Semiconductor

AS4C128M16D3LB-12BCN

File Download Download AS4C128M16D3LB-12BCN Datasheet


Description
AS4C128M16D3LB-12BCN Revision History 2Gb AS4C128M16D3LB-12BCN - 96 ball FBGA PACKAGE Revision Details Rev 1.0 Preliminary datasheet Date Mar. 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1/45 - Rev.1.0 Mar 2016 AS4C128M16D3LB-12BCN Specifications - Density : 2G bits - Organization : - 16M words x 16 bits x 8 banks - Package : - 96-ball FBGA - Lead-free (RoHS compliant) and Halogen-free - Power supply : VDD, VDDQ = 1.35V (1.283V to 1.45V) - Backward compatible to VDD, VDDQ = 1.5V ± 0.075V - Data rate : 1600Mbps - 2KB page size - Row address: A0 to A13 - Column address: A0 to A9 - Eight internal banks for concurrent operation - Burst lengths (BL) : 8 and 4 with Burst Chop (BC) - Burst type (BT) : - Sequential (8, 4 with BC) - Interleave (8, 4 with BC) - CAS Latency (CL) : 5, 6, 7, 8, 9, 10, 11 - CAS Write Latency (CW...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)