ACE6428B
N-Channel Enhancement Mode Field Effect Transistor
Description The ACE6428B uses advanced trench technology to ...
ACE6428B
N-Channel Enhancement Mode Field Effect
Transistor
Description The ACE6428B uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a high side switch in SMPS and general purpose applications.
Features
VDS(V)=30V ID=43A (VGS=10V) RDS(ON)＜10mΩ (VGS=10V) RDS(ON)＜14.5mΩ (VGS=4.5V) 100% Delta Vsd Tested 100% Rg Tested
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
30 V
Gate-Source Voltage
VGSS ±20 V
Drain Current (Continuous) TA=25 OC TA=100 OC
ID
43 27 A
Drain Current (Pulse) C
IDM 80
Drain Current (Continuous)
TA=25 OC TA=70 OC
IDSM
11 A
8
Power Dissipation B
TA=25 OC TA=100 OC
PD
30 W
12
Power Dissipation A
TA=25 OC TA=70 OC
PDSM
2 W
1.3
Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC
Thermal Characteristics
Parameter
Symbol Typ Max Units
Maximum Junction-to-Ambient A
t≦10s
Maximum Junction-to-Ambient A D Steady-...
